Continuing our “FAMES Researcher Portraits” series“FAMES Researcher Portraits” series, which highlights the people who drive the project forward, we are pleased to feature Claire Fenouillet‑Béranger, Director of Research and Fellow Expert at CEA‑LETI, currently leading the 10 nm FD‑SOI integration at LETI and WP4 within FAMES.
Claire Fenouillet-Béranger is recognized for her researches in advanced devices integration and especially for her expertise in FD-SOI technology for the past twenty years. Since 2021, she is in charge of the 10nm FD-SOI integration development at LETI and, WP4 leader (FD-SOI FEOL integration) in the FAMES project.
The development of 10 nm FD-SOI technology requires significant device scaling while simultaneously improving performance to meet the target specifications. Addressing this challenge demands the introduction of new architectural concepts and advanced process building blocks. Among the available performance boosters, strain engineering remains a key enabler and can be implemented either at the wafer level or locally at the device level. Additional process modules are also necessary to reduce access resistance and further enhance device performance. In this context, the integration of in-situ doped, faceted raised source/drain regions becomes essential. Furthermore, reaching the aggressive contacted poly pitch (CPP) target of 68 nm requires the adoption of advanced lithography schemes as Self-Aligned Double Patterning (SADP), to ensure the required density scaling.
The in-situ doped, faceted raised source and drain heavily doped with phosphorus (Si:P) for NMOS and SiGe:B for PMOS are introduced to reduce access resistance and enhance device performance. Depending on the epitaxial growth conditions, strain can also be intentionally introduced in the source and drain regions. The key challenge is to find the right balance between achieving a sufficiently high doping level to minimize access resistance while optimizing the annealing process to activate dopants without inducing excessive diffusion for leakage control.
FAMES is a unique opportunity to accelerate the development of key technological topics through the synergy of leading European partners. It enables, throughout the purchased of new generation tools, the integration of advanced building blocks for the development of the next generation of FD-SOI nodes and assessing their technological and industrial viability.
Current developments have been carried out using relaxed (28 nm) design rules, yielding promising results. The next step is to integrate all the different building blocks, and especially the strain options, into a mask set based on 10 nm design rules.
Find out more about the FAMES consortium.
Editorial – FAMES Newsletter 5 As we wave goodbye to summer, it’s time to dive back into the action, and FAMES has been busy! The results are in, and they’re...
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