NEWS & EVENTS
- Press Release
CEA-Leti Advances European FD-SOI Innovation with GlobalFoundries’ Collaboration in the FAMES Pilot Line
CEA-Leti, a leading European research institute for microelectronics, today reaffirmed its long-standing collaboration with GlobalFoundries (GF), whose ongoing participation in the FAMES Pilot Line as an end user is advancing...
- Technology
3D Integrated Power Conversion: Tyndall and CEA-Leti Bring DC-DC Conversion Inside Advanced Packages
A major milestone in advanced power delivery technologies with the tape-out of a Power Management Integrated Circuit (PMIC) in advanced FD-SOI technology....
- Technology
Localised Strain Engineering for Next-Gen FD-SOI MOSFETs
CEA-Leti successfully demonstrates how targeted Xe, Ar, and Ge ion implantations can modulate the mechanical strain of the Contact Etch Stop Layer (CESL)....
- Event
FAMES in Granada: A Week of Scientific Exchange, Innovation and Collaboration
FAMES in Granada: A Week of Scientific Exchange, Innovation and Collaboration From 18 to 22 May 2026, the FAMES Pilot Line team was in Granada, Spain, for a week dedicated...
- Press Release
The FAMES Payoff Begins: Discover Key FAMES Results
The FAMES Payoff Begins features major results in the areas of FD-SOI advanced nodes, eNVMs, 3D integration, RF components, and PMIC solutions....
- Technology
SADP implementation at the gate-level patterning for the 7nm FD-SOI node
These results demonstrate the feasibility of extending planar FD-SOI technology toward 7nm node using a low-cost gate patterning solution such as SADP....
