NEWS & EVENTS
- Uncategorized
FAMES European FD-SOI Design School (EFDS)
FAMES European FD-SOI Design School (EFDS) The first European FD-SOI Design School will take place in Grenoble from January 25 to 30 2026, bringing together students, researchers, and industry professionals...
- Uncategorized
Editorial – Second FAMES Newsletter
Come learn how you, too, can access the FAMES Pilot Line technologies! Join us in Brussels, Belgium on March 18, 2025....
- Press Release
R&D Advances for the FAMES Pilot Line: 400 °C CMOS Breakthrough Opens Critical Doors to 3D Integration Goals
CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices...
- Technology
Partner’s Corner: Interview with Dr. Wenke Weinreich from Fraunhofer IPMS
Dr Wenke Weinreich is one of the partners involved in the Fames project. She joined the Fraunhofer Center for Nanoelectronic Technologies (CNT) in 2006 and became Director of the CNT...
- Technology
Si:P and SiGe:B Dual epitaxy development for 10nm FD-SOI Raised Source-Drain
Introduction of strain is one of the main levers in order to achieve the performance for the new generation of 10nm FD-SOI devices. Tensile stress enhances the electron mobility for...
- Technology
Advancing 3D Integration in Europe: Leveraging PREVAIL Infrastructure for FAMES Technology Development
Thanks to key investments from the PREVAIL Test and Experimentation Facility (TEF), CEA-Leti has made significant progress in the procurement and installation of critical process tools to address the ultra-fine...
