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Category: Press Release

R&D Advances for the FAMES Pilot Line: 400 °C CMOS Breakthrough Opens Critical Doors to 3D Integration Goals

CEA-Leti, the coordinator of the FAMES Pilot line, has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match electrical performance of devices fabricated at standard thermal budget (>1000 °C), removing one of the last barriers to large-scale 3D sequential integration (3DSI) —a core objective of FAMES.

FAMES Pilot Line Launches FAMES Academy To Train Europe’s Chip Engineers with Skills to Leverage FD-SOI Technology and Design Circuits Using Advanced Setups

FAMES Pilot Line Launches FAMES Academy To Train Europe’s Chip Engineers with Skills to Leverage FD-SOI Technology and Design Circuits Using Advanced Setups Workshop at CEA-Leti Innovation Days—LID World Summit Unveils an Extended SeriesOf Courses and Training to ‘Shape the Future’ of Europe’s Chip Design and Integration GRENOBLE, France – June 6, 2025 – The […]

FAMES Pilot Line In Nature Reviews Electrical Engineering

FAMES Pilot Line In Nature Reviews Electrical Engineering GRENOBLE, FRANCE – Feb. 7, 2025 – The FAMES Pilot Line offers a complete set of technologies to develop innovative chip architectures. FAMES will open new research avenues for enhancing performance and lowering power consumption for mixed-signal circuits – and strengthening European sovereignty in microelectronics, CEA-Leti reported […]

CEA-Leti Announces Launch of FAMES Pilot Line As Part of EU Chips Act Initiative

GRENOBLE, France – June 24, 2024 – CEA-Leti is proud to announce the kick-off meeting today of the FAMES Pilot Line, a pioneering project aimed at advancing semiconductor technologies in Europe. This initiative aligns with the ambition of the EU Chips Act, which seeks to bolster EU semiconductor capabilities and ensure technological sovereignty.The pilot line […]

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FAMES is a European Union’s Horizon Europe Research and Innovation programme

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FAMES - EU-funded project
The FAMES Pilot Line of the Chips JU is funded by Horizon Europe and Digital Europe Programs and  the National Public Authorities of the partners involved.
Grants N° 101182279 and 101182297.

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Leader of Work Package ​​3D and heterogeneous integration

Lilian Masarotto (CEA-Leti), Senior project manager

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FAMES European FD-SOI Design School (EFDS)

Winter School – 25-30 January 2026, Grenoble,  France
training costs: 1960€

All FAMES Partners undertake to respect their obligations in application of regulations in force and, especially, regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016, on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (referred to as “GDPR”).

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All FAMES Partners undertake to respect their obligations in application of regulations in force and, especially, regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016, on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (referred to as “GDPR”).

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All FAMES Partners undertake to respect their obligations in application of regulations in force and, especially, regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016, on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (referred to as “GDPR”).

Spontaneous User Request

Please note that your answers will help us establish the eligibility of your request.

All FAMES Partners undertake to respect their obligations in application of regulations in force and, especially, regulation (EU) 2016/679 of the European Parliament and of the Council of 27 April 2016, on the protection of natural persons with regard to the processing of personal data and on the free movement of such data (referred to as “GDPR”).

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Open Access chair person - FAMES Pilot Line

Open Access Chairperson

Susana Bonnetier (CEA-Leti)

For inquiries or problems regarding the Open Access/Spontaneous Request, you can contact us directly.

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