Claire Fenouillet‑Béranger is Director of Research and Fellow Expert at CEA‑LETI, internationally recognized for her pioneering work in advanced device integration and her two decades of leadership in FD‑SOI technology, currently leading the 10 nm FD‑SOI integration at LETI and WP4 within FAMES.

Meet a FAMES’ researcher : Interview with Claire Fenouillet-Béranger

Claire fenouillet beranger
© UtopikPhoto/CEA

Continuing our “FAMES Researcher Portraits” series“FAMES Researcher Portraits” series, which highlights the people who drive the project forward, we are pleased to feature Claire Fenouillet‑Béranger, Director of Research and Fellow Expert at CEA‑LETI, currently leading the 10 nm FD‑SOI integration at LETI and WP4 within FAMES.

What is your research topic, and your role in the FAMES project?

Claire Fenouillet-Béranger is recognized for her researches in advanced devices integration and especially for her expertise in FD-SOI technology for the past twenty years. Since 2021, she is in charge of the 10nm FD-SOI integration development at LETI and, WP4 leader (FD-SOI FEOL integration) in the FAMES project.

What challenges are you and your team addressing for the 10 nm FD-SOI node?

The development of 10 nm FD-SOI technology requires significant device scaling while simultaneously improving performance to meet the target specifications. Addressing this challenge demands the introduction of new architectural concepts and advanced process building blocks. Among the available performance boosters, strain engineering remains a key enabler and can be implemented either at the wafer level or locally at the device level. Additional process modules are also necessary to reduce access resistance and further enhance device performance. In this context, the integration of in-situ doped, faceted raised source/drain regions becomes essential. Furthermore, reaching the aggressive contacted poly pitch (CPP) target of 68 nm requires the adoption of advanced lithography schemes as Self-Aligned Double Patterning (SADP), to ensure the required density scaling.

How the use of double in-situ epitaxy is a turning point for 10 nm FD-SOI node?

The in-situ doped, faceted raised source and drain heavily doped with phosphorus (Si:P) for NMOS and SiGe:B for PMOS are introduced to reduce access resistance and enhance device performance. Depending on the epitaxial growth conditions, strain can also be intentionally introduced in the source and drain regions. The key challenge is to find the right balance between achieving a sufficiently high doping level to minimize access resistance while optimizing the annealing process to activate dopants without inducing excessive diffusion for leakage control.

How FAMES helped you achieve those results?

FAMES is a unique opportunity to accelerate the development of key technological topics through the synergy of leading European partners. It enables, throughout the purchased of new generation tools, the integration of advanced building blocks for the development of the next generation of FD-SOI nodes and assessing their technological and industrial viability.

What are the next steps ahead?

Current developments have been carried out using relaxed (28 nm) design rules, yielding promising results. The next step is to integrate all the different building blocks, and especially the strain options, into a mask set based on 10 nm design rules.

Find out more about the FAMES consortium.

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Ferrite Circulators: Theory, Design and Simulation

12 October 2026
Cost: 150€

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Leader of Work Package ​​3D and heterogeneous integration

Lilian Masarotto (CEA-Leti), Senior project manager

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FAMES European FD-SOI Design School (EFDS)

FAMES European FD-SOI Design School (EFDS)
January 25-29, 2027
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